Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure
A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been
Gocalinska, A. et al.
Fecha de publicación:
4
2012