Journal: Applied Physics Letters

  • Publication
    InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer
    Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded InxGa1-xAs/InP metamorphic...
  • Publication
    Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure
    A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic...
  • Publication
    Unusual nanostructures of "lattice matched" InP on AlInAs
    We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by...