Optical spectroscopy as a monitor of thin film growth in sputtering

Bibcode
2011SPIE.8011E..86A
DOI
10.1117/12.902029
Abundiz, Noemi; Perez, Angeles; García, Víctor; Machorro, Roberto
Bibliographical reference

22nd Congress of the International Commission for Optics: Light for the Development of the World. Edited by Rodríguez-Vera, Ramón; Díaz-Uribe, Rufino. Proceedings of the SPIE, Volume 8011, pp. 80112N-80112N-9 (2011).

Advertised on:
8
2011
Number of authors
4
IAC number of authors
0
Citations
1
Refereed citations
1
Description
Line intensity ratio has been used in astronomy to calculate plasma density and temperature. This procedure is applied to monitor thin film growth in plasma-assisted deposition, it provides very useful information such as density and temperature of the plasma. The propose of this study is monitor variations of the plasma during deposition, using wide field optical spectroscopy and establish a relation with thin film stoichiometry. We report the preparation of inhomogeneous SiOxNy thin films, by sputtering.
Type
Non-refereed

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